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| SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. B KTA1296 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES : VCE(sat)=-0.5V(Max.) at IC=-2A Complementary to KTC3266. K D E G N A Low Saturation Voltage. MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -20 -20 -6 -2 -0.5 625 150 -55 150 UNIT F H F V L V V A A mW 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification Y:120 240, ) TEST CONDITION VCB=-20V, IE=0 VEB=-6V, IC=0 VCE=-2V, IC=-0.1A VCE=-2V, IC=-2A IC=-2A, IB=-0.1A VCE=-2V, IC=-0.1A VCE=-2V, IC=-0.5A VCB=-10V, IE=0, f=1MHz MIN. 120 40 TYP. 120 40 MAX. -0.1 -0.1 400 -0.5 -0.85 V V MHz pF UNIT A A ICBO IEBO SYMBOL hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob GR:200 400 2000. 11. 30 Revision No : 0 1/2 KTA1296 I C - VCE COLLECTOR CURRENT I C (mA) -2000 -1600 -1200 -800 -400 0 0 -4 -8 DC CURRENT GAIN h FE I B =-25mA I B =-20mA I B =-15mA I B =-10mA I B =-8mA I B =-6mA I B =-4mA I B =-3mA I B =-2mA I B =-1mA I B =-0mA COMMON EMITTER Ta=25 C h FE - I C 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 10 -1 -3 -10 COMMON EMITTER VCE =-2V -30 -100 -300 -1k -3k -12 -16 -20 -24 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) IC - VBE COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -1 -3 COMMON EMITTER I C /I B =20 -2000 -1600 C Ta=25 C COMMON EMITTER V CE =-2V Ta=100 Ta=25 C -800 -400 0 0 -0.4 0 =1 Ta 0 C Ta=-25 C -0.8 Ta=-25 -1200 C -1.2 -1.6 -2.0 -2.4 -10 -30 -100 -300 -1K -3K BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA) SAFE OPERATING AREA -10 Pc - Ta COLLECTOR CURRENT I C (A) COLLECTOR POWER DISSIPATION P C (W) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) -3 -1 -0.3 -0.1 -0.03 I C MAX.(PULSED)** 1m I C MAX. (CONTINUOUS) DC OP Ta ERA =2 T 5 IO CN 10 m s* 10 0m s* s* -0.01 -0.1 -0.3 -1 -3 -10 COLLECTOR-EMITTER VOLTAGE VCE (V) 2000. 11. 30 Revision No : 0 VCEO MAX. SINGLE NONREPETITIVE PULSE Ta=25 C * PULSE WIDTH:10ms(MAX.) DUTY CYCLE:30%, Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE * -30 2/2 |
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